BDT63B DARLINGTO NPN 100V 10A 90W TO220

SILICON DARLINGTON POWER TRANSISTQRS. N-P-N epitaxial base trwsiszon in monolithic Darlingwn circuiz for audio cumin stages and gengral

Type Designator: BDT63B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2000

Noise Figure, dB: -

Package of BDT63B transistor: TO220