BD139 NPN 1.5A 80V 12W TO-126

Type Designator: BD139

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 12

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BD139 transistor: TO126